Published September 2001
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Characteristics of highly resistive layers of GaAs for ionizing radiation detectors
- 1. Termez State University, Termez (Uzbekistan)
Description
no abstract available
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33007231.pdf
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Additional details
Publishing Information
- Imprint Title
- Abstracts of the fourth international conference on modern problems of nuclear physics
- Imprint Pagination
- 323 p.
- Journal Page Range
- p. 188-189
- Report number
- INIS-UZ--087
Conference
- Title
- 4. international conference 'Modern problems of nuclear physics'
- Dates
- 25-29 Sep 2001
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 33007231
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHROMIUM ADDITIONS; CRYSTAL DOPING; GALLIUM ARSENIDES; LAYERS; MONOCRYSTALS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; RADIATION DETECTION; SENSITIVITY
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CHROMIUM ALLOYS; CRYSTALS; DETECTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; TRANSITION ELEMENT ALLOYS