Tailoring LaTiO${}_3$ for Mottronics

3d transition metal oxides exhibit fascinating phenomena - absent in conventional semiconductors - like Mott insulating behaviour due to pronounced electron-electron interactions. The field of Mottronics dreams of harnessing the phase transition between the correlated metal and the Mott insulating phase of such strongly correlated materials for novel electronic devices. We have recently demonstrated that the prototypical Mott insulator LaTiO${}_3$ can undergo the band filling controlled Mott transition if it is chemically p-doped by excess oxygen during thin film growth by pulsed laser deposition. Here we report on the influence of dimensionality in the ultrathin film limit for varying doping levels by photoelectron spectroscopy, tuning the material in the generic phase diagram (correlation strength versus band filling) close to the boundary of the phase transition. Doing so the metal-insulator transition can possibly be triggered by electric field gating.