Published March 2010 | Version v1
Journal article Metadata-only

Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

Creators

  • 1. Department of Physics, Hunan Normal University, Changsha 410081 (China)
  • 2. Institute of Optoelectronics, Shenzhen University, Shenzhen 518060 (China)

Description

The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300% and 3800% for the magnetic barrier spaces W = 81.3 and 243.9 nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/19/3/037301

Additional details

Identifiers

DOI
10.1088/1674-1056/19/3/037301;

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
19
Journal Issue
3
Journal Page Range
[5 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45009846
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DIFFUSION BARRIERS; ELECTRON GAS; MAGNETIZATION; MAGNETORESISTANCE; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SPIN; TRANSFER MATRIX METHOD; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
ANGULAR MOMENTUM; CALCULATION METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; MATERIALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES