Published 1985 | Version v1
Journal article Metadata-only

Ion-bombarded-assisted reaction in the Ge-Au-GaAs system

Creators

  • 1. Hosei Univ., Tokyo (Japan). College of Engineering

Description

no abstract available

Additional details

Publishing Information

Journal Title
Hosei Daigaku Ion Bimu Kagaku Kenkyusho Hokoku
Journal Issue
suppl.4
Series
Hosei Daigaku Ion Bimu Kagaku Kenkyusho Hokoku.
ISSN
0286-0201
CODEN
HDIHD

Conference

Title
3. symposium on ion beam technology, Hosei University. Ion beam analysis.
Dates
7-8 Dec 1984.
Place
Koganei, Tokyo (Japan).

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
17018028
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ANNEALING; BACKSCATTERING; CHEMICAL REACTIONS; DEPOSITION; ELECTRIC CONTACTS; ENERGY SPECTRA; GALLIUM ARSENIDES; GERMANIUM; GOLD; ION BEAMS; ION IMPLANTATION; ION SPECTROSCOPY; RUTHERFORD SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON IONS; SPUTTERING; TEMPERATURE DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; BEAMS; CHARGED PARTICLES; ELASTIC SCATTERING; ELECTRICAL EQUIPMENT; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; METALS; MICROSCOPY; SCATTERING; SPECTRA; SPECTROSCOPY; TRANSITION ELEMENTS

Optional Information

Notes
Published in summary form only.