Published September 2021 | Version v1
Journal article

Theoretical and experimental investigation of external-stress effect on quantum-well-based semiconductor interferometer performance

  • 1. Nippon Telegraph and Telephone Corporation, NTT Device Innovation Center, Atsugi, Kanagawa (Japan)
  • 2. Nippon Telegraph and Telephone Corporation, NTT Device Technology Laboratories, Atsugi, Kanagawa (Japan)

Description

We investigate characteristic fluctuations in multi-quantum well (MQW)-based waveguides whose absorption spectrum experimentally changes as a ∼5 nm blue shift when dielectric passivation layers are employed. We theoretically show that the blue shift corresponds to a ∼0.03% compressive strain in the MQW resulting in a group refractive index change (Δng) of ∼−0.01. The estimated Δng agrees with an experimentally obtained free spectral range of transmittance of an asymmetric Mach-Zehnder interferometer composed of the MQW structure. The results indicate that our theoretical estimation is an efficient way to evaluate the MQW-based waveguide performance with an external stress. (author)

Availability note (English)

Available from DOI: https://doi.org/10.35848/1882-0786/ac17d1

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Express (Online)
Journal Volume
14
Journal Issue
9
Journal Page Range
p. 091005.1-091005.5
ISSN
1882-0786

Optional Information

Notes
30 refs., 5 figs.