Published May 2010 | Version v1
Journal article

Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures

  • 1. QinetiQ, St Andrews Road, Malvern, Worcestershire WR14 3PS (United Kingdom)
  • 2. Department of Physics, Imperial College, Prince Consort Road, London SW7 2BZ (United Kingdom)

Description

Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QWs) with different doping densities are reported. The QW two-dimensional electron gas (2DEG) carrier densities and mobilities were extracted by analysis of the Hall and quantum Hall data, mobility spectra and Shubnikov-de Haas oscillations. 2DEG channel mobilities of up to 324 000 cm2 V-1 s-1 (T=2 K) and 44 000 cm2 V-1 s-1 (T=300 K) are extracted. Carrier densities and mobilities for transport parallel to the 2DEG layer are also deduced where observable. The importance of thermally generated carriers in the lower AlInSb barrier material and the role of transport within the δ-doping plane is considered and the total carrier population as a function of temperature of the two samples is deduced, which is in excellent agreement with experimental observation.

Availability note (English)

Available from http://dx.doi.org/10.1088/1367-2630/12/5/053022

Additional details

Publishing Information

Journal Title
New Journal of Physics
Journal Volume
12
Journal Issue
5
Journal Page Range
[9 p.]
ISSN
1367-2630