Published January 2015
| Version v1
Journal article
Analysis of electronic structure of oxide semiconductor/insulator interface by two-dimensional photoelectron spectroscopy
Creators
- 1. Nara Institute of Science and Technology, Ikoma, Nara (Japan)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Seramikkusu
- Journal Volume
- 50
- Journal Issue
- 1
- Journal Page Range
- p. 37-41
- ISSN
- 0009-031X
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 47011557
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GALLIUM OXIDES; HEAT TREATMENTS; INDIUM OXIDES; INTERFACES; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SPRING-8 STORAGE RING; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON SPECTROSCOPY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MOBILITY; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; PHOTOELECTRON SPECTROSCOPY; RADIATION SOURCES; SILICON COMPOUNDS; SPECTROSCOPY; STORAGE RINGS; SYNCHROTRON RADIATION SOURCES; ZINC COMPOUNDS
Optional Information
- Notes
- 5 refs., 6 figs., 1 tab.