Published February 21, 2011
| Version v1
Journal article
Multiple phosphorus chemical sites in heavily phosphorus-doped diamond
Creators
- 1. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, Okayama 700-8530 (Japan)
- 2. Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530 (Japan)
- 3. The Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530 (Japan)
- 4. Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan)
- 5. Research Laboratory for Surface Science, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530 (Japan)
- 6. Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Center 2, Tsukuba, Ibaraki 305-8568 (Japan)
- 7. National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
- 8. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
Description
We have performed high-resolution core level photoemission spectroscopy on a heavily phosphorus (P)-doped diamond film in order to elucidate the chemical sites of doped-phosphorus atoms in diamond. P 2p core level study shows two bulk components, providing spectroscopic evidence for multiple chemical sites of doped-phosphorus atoms. This indicates that only a part of doped-phosphorus atoms contribute to the formation of carriers. From a comparison with band calculations, possible origins for the chemical sites are discussed.
Additional details
Identifiers
- DOI
- 10.1063/1.3554699;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 98
- Journal Issue
- 8
- Journal Page Range
- p. 082107-082107.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42108939
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMS; COMPARATIVE EVALUATIONS; DIAMONDS; DOPED MATERIALS; PHOSPHORUS ADDITIONS; PHOTOEMISSION; RESOLUTION; SEMICONDUCTOR MATERIALS; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALLOYS; CARBON; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; EVALUATION; FILMS; MATERIALS; MINERALS; NONMETALS; PHOTOELECTRON SPECTROSCOPY; SECONDARY EMISSION; SPECTROSCOPY
Optional Information
- Notes
- (c) 2011 American Institute of Physics