Effect of nitrogen plasma treatment at the Al2O3/Fe interface in magnetic tunnel junction
Creators
- 1. Material and Device Laboratory, Samsung Advanced Institute of Technology (SAIT), P.O. Box 111, Suwon 440-600 (Korea, Republic of)
- 2. Korea Research Institute of Standards and Science (KRISS), Taedok Science Town, Taejon 305-600 (Korea, Republic of)
- 3. Department of Materials Science and Engineering, KwangJu Institute of Science and Technology (K-JIST), Gwangju 500-712 (Korea, Republic of)
Description
We investigated the effects of nitrogen plasma treatment on top surface of Fe pinned layer for short times (tex=0, 10, 30, and 60 s) in magnetic tunnel junctions and annealing of the junctions. The nitrogen-treated junctions show much reduced magnetoresistance (MR) ratio and significantly lower resistance-area (RA) products compared with the untreated junction, i.e., MR≅3%, RA≅30 kΩ μm2 for tex=10 s and MR≅10%, RA≅60 kΩ μm2 for tex=0 s. The untreated junction showed enhanced MR ratio up to about 17% and higher RA (≅70 kΩ μm2) upon thermal annealing at Ta=230 deg. C, as expected. For the nitrogen-treated junctions, while the MR ratio also increases up to about 16% upon annealing at Ta=230 deg. C, which is almost the same value as the one of the optimal reference junction, the RA values of the annealed junctions still keep as low as their initial values. We believe that the redistribution of nitrogen during the annealing process is responsible for the change of properties of nitrogen-treated junction. The bias dependence of MR and the estimation of effective barrier height and thickness are studied and found to be consistent with the observed changes in nitrogen-treated junctions
Additional details
Identifiers
- DOI
- 10.1063/1.1540173;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 93
- Journal Issue
- 10
- Journal Page Range
- p. 7026-7028
- ISSN
- 0021-8979
- CODEN
- JAPIAU
Conference
- Title
- 47. annual conference on magnetism and magnetic materials
- Dates
- 11-15 Nov 2002
- Place
- Tampa, FL (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35004910
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM OXIDES; ANNEALING; IRON; MAGNETORESISTANCE; NITROGEN; PLASMA; SURFACE TREATMENTS; THIN FILMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; HEAT TREATMENTS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.