Defects Resulting from Doping Silicon using Ion Implantation Technique

Defects introduced in silicon during doping boron and phosphorus are evaluated using the Stopping and Range of Ions in Matter (SRIM-2003) programs for boron and phosphorus ions of energy 25 keV and 70 keV, respectively. The defects are located within the 1500 degree A from the surface layer. The ionization process is found to be responsible for the loss of 68.2% and 56.9% of the total energy carried out by B and P ions, respectively. Intensive amounts of electron-hole pairs are created with maximum yields starting at the surface up to about 600 degree A deep in the silicon layer followed by a rapid decrease with slopes depending on the type and energy of the ions. The balance of energy causes the production of silicon recoils, vacancy-interstitial pairs, and phonons during the collision process. The replacement collisions and their energies are evaluated. The distribution of energy during the collision process is not uniform with resonance peaks depending on the cross sections. The energy required to displace a silicon atom is also calculated