Published 2003 | Version v1
Miscellaneous Metadata-only

Structural and optical properties of high temperature and high pressure treated Si:H,D

Creators

  • 1. Instiute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 2. Institute of Electron Technology, Warsaw (Poland)
  • 3. Institute of Electronic Materials Technology (ITME), Warsw (Poland)
  • 4. Institute of Semiconductor Physics (ISP), Novosibirsk (Russian Federation)

Description

no abstract available

Part of:
Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting

Additional details

Additional titles

Augmented title (English)
ion implantation

Publishing Information

Imprint Title
Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting
Imprint Pagination
287 p.
Journal Page Range
p. 70-71

Conference

Title
European Materials Conference E-MRS 2003 Fall Meeting
Dates
15-19 Sep 2003
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
35101077
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CZOCHRALSKI METHOD; DEUTERIUM IONS; HEAT TREATMENTS; HYDROGEN IONS; ION IMPLANTATION; MAPPING; MONOCRYSTALS; NEUTRON DIFFRACTION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PRESSURE RANGE MEGA PA 10-100; SILICON; X-RAY DIFFRACTION
Descriptors DEC
CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELEMENTS; EMISSION; IONS; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES; PRESSURE RANGE; PRESSURE RANGE MEGA PA; SCATTERING; SEMIMETALS

Optional Information