A full on-chip CMOS low-dropout voltage regulator with VCCS compensation
Creators
- 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
Description
A full on-chip CMOS low-dropout (LDO) voltage regulator with high PSR is presented. Instead of relying on the zero generated by the load capacitor and its equivalent series resistance, the proposed LDO generates a zero by voltage-controlled current sources for stability. The compensating capacitor for the proposed scheme is only 0.18 pF, which is much smaller than the capacitor of the conventional compensation scheme. The full on-chip LDO was fabricated in commercial 0.35 μm CMOS technology. The active chip area of the LDO (including the bandgap voltage reference) is 400 x 270 μm2. Experimental results show that the PSR of the LDO is -58.7 dB at a frequency of 10 Hz and -20 dB at a frequency of 1 MHz. The proposed LDO is capable of sourcing an output current up to 50 mA. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/31/8/085006Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 31
- Journal Issue
- 8
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42071730
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITORS; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS; VOLTAGE REGULATORS
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; MATERIALS; MICROELECTRONIC CIRCUITS