Published August 2010 | Version v1
Journal article

A full on-chip CMOS low-dropout voltage regulator with VCCS compensation

  • 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

Description

A full on-chip CMOS low-dropout (LDO) voltage regulator with high PSR is presented. Instead of relying on the zero generated by the load capacitor and its equivalent series resistance, the proposed LDO generates a zero by voltage-controlled current sources for stability. The compensating capacitor for the proposed scheme is only 0.18 pF, which is much smaller than the capacitor of the conventional compensation scheme. The full on-chip LDO was fabricated in commercial 0.35 μm CMOS technology. The active chip area of the LDO (including the bandgap voltage reference) is 400 x 270 μm2. Experimental results show that the PSR of the LDO is -58.7 dB at a frequency of 10 Hz and -20 dB at a frequency of 1 MHz. The proposed LDO is capable of sourcing an output current up to 50 mA. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/31/8/085006

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
31
Journal Issue
8
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42071730
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
CAPACITORS; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS; VOLTAGE REGULATORS
Descriptors DEC
ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; MATERIALS; MICROELECTRONIC CIRCUITS