Published December 1, 2008
| Version v1
Journal article
Interface structure of epitaxial (111) VN films on (111) MgO substrates
Creators
- 1. Institute of General Physics, Vienna University of Technology, Getreidemarkt 9, A-1000 Vienna (Austria)
- 2. Department of Materials Physics, University of Leoben, Jahnstr.12, A-8700 Leoben (Austria)
- 3. Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstr.12, A-8700 Leoben (Austria)
- 4. Department of Physical Chemistry, University of Vienna, Sensengasse 8, A-1000 Vienna (Austria)
- 5. Department of Physical Metallurgy and Materials Testing, University of Leoben, Roseggerstr.12, A-8700 Leoben (Austria)
Description
Vanadium nitride VN was grown epitaxially on (111) MgO by reactive magnetron sputtering. The substrate preparation and deposition conditions cause an interface roughness of 2-3 nm. The lattice mismatch of cube-on-cube orientation relationship between (111) VN and (111) MgO is relaxed by misfit dislocations. Ab-initio simulations were employed to calculate the lowest energy configuration of the coherent parts of the interface. This is accomplished by an O termination of the MgO and V termination of VN at the interface
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.06.006Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.06.006;
- PII
- S0040-6090(08)00643-3;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 517
- Journal Issue
- 3
- Journal Page Range
- p. 1177-1181
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 35. international conference on metallurgical coatings and thin films (ICMCTF)
- Dates
- 28 Apr - 2 May 2008
- Place
- San Diego, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40061718
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEPOSITION; DISLOCATIONS; EPITAXY; FILMS; INTERFACES; MAGNESIUM OXIDES; MAGNETRONS; ORIENTATION; SIMULATION; SPUTTERING; VANADIUM NITRIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; LINE DEFECTS; MAGNESIUM COMPOUNDS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.