Published February 2015 | Version v1
Journal article Metadata-only

Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

Creators

  • 1. Razak School of Engineering and Advanced Technology, University Technology Malaysia, Kuala Lumpur (Malaysia)
  • 2. School of Advanced Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555 (Japan)
  • 3. CREST, JST, 4-1-8, Honcho Kawaguchi, Saitama, 332-0012 (Japan)

Description

In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements

Additional details

Identifiers

DOI
10.1063/1.4908229;

Publishing Information

Journal Title
AIP Advances
Journal Volume
5
Journal Issue
2
Journal Page Range
p. 027120-027120.7
ISSN
2158-3226
CODEN
AAIDBI

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47023994
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DEPOSITION; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; INTERFACES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; PHOTON EMISSION; PNICTIDES; SCATTERING

Optional Information

Notes
(c) 2015 Author(s)