Published January 13, 2014 | Version v1
Journal article Metadata-only

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Creators

  • 1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
  • 2. TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland)

Description

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (ΦN) during quantum wells (QWs) growth. We found that high ΦN improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed

Additional details

Identifiers

DOI
10.1063/1.4861655;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
2
Journal Page Range
p. 023503-023503.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45096941
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
GALLIUM NITRIDES; LASERS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTODIODES; QUANTUM WELLS; THRESHOLD CURRENT; VAPOR PHASE EPITAXY
Descriptors DEC
CRYSTAL GROWTH METHODS; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Notes
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