Synthesis of dielectric layers in silicon by ion implantation

This chapter is on the synthesis of dielectric layers in silicon by ion implantation and is an attempt to address the fundamental process that occurs when silica is implanted with high doses of carbon, nitrogen and oxygen. First the basic chemistry is dealt with, then the physics of damage and mass transport, and finally, material science aspects of precipitation and microstructure. 116 refs.; 53 figs.; 2 tabs