Published 2008 | Version v1
Book

Photoluminescence, FTIR and electrical measurements of binary dopant (ZrO2/AgI) doped polyaniline

  • 1. Dept. of Physics, Jamia Millia Islamia, New Delhi (India)

Description

Full text: Binary dopant mixture of (ZrO2/AgI) has been prepared in different ratios and is used to dope the synthesized polyaniline (PANI). DC conductivity of (ZrO2/AgI) doped PANI samples is measured in the temperature range (300-400K). The calculated values of pre-exponential factor (σ0) indicates that conduction is taking place through hopping process due to the presence of localized states, present near the fermi level. Structural changes due to interaction of dopant species with PANI are studied through FTIR and photoluminescence characterization. Photoluminescence (PL) spectra of the doped samples occurred in the form of peaks and the intensities of these peaks vary according to the concentration of dopant mixture. The incorporation of dopant mixture into polyaniline has been confirmed through electrical and FTIR studies

Part of:
National seminar on recent advances in materials sciences: proceedings

Additional details

Publishing Information

Publisher
Indian School for Mines Univ.
Imprint Place
Dhanbad (India)
Imprint Title
National seminar on recent advances in materials sciences: proceedings
Imprint Pagination
110 p.
Journal Page Range
p. 53

Conference

Title
national seminar on recent advances in materials sciences
Acronym
RAMS-08
Dates
15-17 Feb 2008
Place
Dhanbad (India)

Optional Information