Published 1988
| Version v1
Miscellaneous
Growth of thick homogeneous GaxIn1-xAsyP1-y, AlxGa1-xPyAs1-y solid solutions on substrates of indium phosphide and gallium arsenide in temperature gradient field
Creators
Description
Short note. 2 refs
Additional details
Additional titles
- Original title (Russian)
- Выращивание толстых однородных твердых растворов Га
Publishing Information
- Imprint Title
- Crystal growth from solution. Growth of monocrystals and films of high-temperature superconductors. V. 2
- Imprint Pagination
- 451 p.
- Journal Page Range
- p. 338-339.
- Report number
- INIS-SU--129
Conference
- Title
- 7. All-union conference on crystal growth. Symposium on molecular beam epitaxy.
- Dates
- 14-19 Nov 1988.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20074790
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- DISLOCATIONS; EPITAXY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; KINETICS; SOLID SOLUTIONS; SUBSTRATES; THICKNESS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISPERSIONS; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; LINE DEFECTS; MIXTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SOLUTIONS
Optional Information
- Notes
- Imprint:T-14352.;Rost kristallov iz rastvorov. Vyrashchivanie monokristallov i plenok vysokotemperaturnykh sverkhprovodnikov. Tom 2.;Rasshirennye tezisy.