Published March 1985
| Version v1
Journal article
The convergent effect of the annealing temperatures of electron irradiated defects in FZ silicon grown in hydrogen
Creators
- 1. Peking Univ. (China). Dept. of Physics
- 2. Academia Sinica, Beijing (China)
Description
In comparison with electron irradiated Si grown in argon, the annealing temperatures of electron irradiated defects in Si grown in hydrogen decrease and convergent to a small temperature range. The annealing temperatures of most electron irradiated defects in n type and p type Si grown in hydrogen are reduced and converge to the temperature interval between 250-2700C and 180-2000C respectively. The possible-mechanism of convergent effect of the annealing temperatures is discussed. (author)
Additional details
Publishing Information
- Journal Title
- Solid State Commun.
- Journal Volume
- 53
- Journal Issue
- 11
- Series
- Solid State Commun.
- Journal Page Range
- 975-978
- ISSN
- 0038-1098
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 16047605
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ELECTRONS; HYDROGEN; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILICON; TEMPERATURE DEPENDENCE; ZONE MELTING
- Descriptors DEC
- ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HEAT TREATMENTS; LEPTONS; MATERIALS; MELTING; NONMETALS; PHASE TRANSFORMATIONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS