Thin films of topological crystalline insulator SnTe in contact with heterogeneous atomic layers
Creators
- 1. Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)
Description
Tin telluride is a topological crystalline insulator that has gapless surface states protected by mirror symmetry. The symmetry remains intact when the insulator is reduced in thickness and becomes a thin film, according to ab initio calculations based on density functional theory. Furthermore, a SnTe thin film in contact with a heterogeneous atomic layer is capable of closing energy gap caused by quantum tunneling between the two thin film surfaces and therefore distinguishes two conducting channels through surface and interface states respectively. Our calculations of SnTe films deposited with a lead telluride layer have two Dirac cones separated in energy, while the same film in contact with strontium telluride have the cones separated in momentum. The composite with a magnetic manganese telluride layer, however, loses both the mirror and time-reversal symmetry. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/aa5132Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 18
- Journal Issue
- 12
- Journal Page Range
- [8 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49030634
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CRYSTALS; DENSITY FUNCTIONAL METHOD; DEPOSITION; ENERGY GAP; LEAD TELLURIDES; MANGANESE TELLURIDES; STRONTIUM COMPOUNDS; SYMMETRY; THIN FILMS; TIN TELLURIDES; TOPOLOGY; TUNNEL EFFECT
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CALCULATION METHODS; CHALCOGENIDES; FILMS; LEAD COMPOUNDS; MANGANESE COMPOUNDS; MATHEMATICS; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS