Radiation effects on GaAs Charge Coupled Devices with high resistivity gate structures

The results of a study on the effects of 1 MeV electrons and 1 MeV neutrons on the operation of high speed GaAs Charge Coupled Devices (CCDs) are presented. Radiation-induced trapping levels are characterized using a linear array CCD structure and the periodic pulse technique. 1 MeV electron irradiation introduced traps at 0.1 eV and 0.39 eV with bulk trap introduction rates of 1 cm-1 and 0.33 cm-1, respectively. The devices were irradiated to a maximum fluence of 9 x 1014 electrons/cm2. 1 MeV neutron irradiation introduced an electron trap level at 0.64 eV with a bulk trap introduction rate of 0.5 cm-1. Catastrophic device failure occurred at neutron fluences of 6 x 1013 neutrons/cm2. Device charge transfer efficiency was characterized pre- and post-irradiation over the temperature range of 800K to 3000K