Published 1989 | Version v1
Book

Hardening semiconductor components against radiation and temperature

  • 1. Sandia National Labs., Albuquerque, NM (USA)
  • 2. Jet Propulsion Lab. (USA)
  • 3. Harry Diamond Lab. (USA)
  • 4. Honeywell, Inc. (USA)

Description

This book describes hardening of semiconductor components against radiation and temperature. Basic mechanisms of radiation effects in electronic materials and devices are discussed first, followed by such practical topics as hardening technologies, circuit design for hardening, and, finally, hardness assurance. Discussions center mainly on silicon technology

Availability note (English)

Noyes Publications, Mill Road at Grand Ave., Park Ridge, NJ 07656 (USA).

Additional details

Publishing Information

Publisher
Noyes Publications.
Imprint Place
Park Ridge, NJ (USA)
ISBN
0-8155-1212-0
Imprint Pagination
328 p.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21086267
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
HARDENING; INTEGRATED CIRCUITS; PHYSICAL RADIATION EFFECTS; SILICON; SPECIFICATIONS
Descriptors DEC
ELECTRONIC CIRCUITS; ELEMENTS; RADIATION EFFECTS; SEMIMETALS