Published 1979 | Version v1
Journal article Metadata-only

The isomer shift values of implanted /133Xe/ 133Cs in various hosts

Creators

  • 1. Louvain Univ. (Belgium)

Description

The isomer shift values of 133Cs implanted in graphite, diamond, Te, Si, Ge, Cu, Zn, Mo, and W are found in a larger interval than those found in Cs and Cs-compounds. The extension to larger values are explained by the increase of electron densities due to the compression of the oversized implanted atom

Additional details

Publishing Information

Journal Title
J. Phys. (Paris), Colloq.
Journal Issue
no.2
Series
J. Phys. (Paris), Colloq.

Conference

Title
8. International conference on applications of the Moessbauer effect.
Dates
28 Aug - 1 Sep 1978.
Place
Kyoto, Japan.

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
11503551
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
CESIUM 133; COPPER; DIAMONDS; ELECTRON DENSITY; EXPERIMENTAL DATA; GERMANIUM; GRAPHITE; GRAPHS; ION IMPLANTATION; ISOMER SHIFT; LINE BROADENING; MOESSBAUER EFFECT; MOLYBDENUM; SILICON; TELLURIUM; TUNGSTEN; ZINC
Descriptors DEC
CARBON; CESIUM ISOTOPES; DATA; DATA FORMS; ELEMENTS; INFORMATION; INTERMEDIATE MASS NUCLEI; ISOTOPES; METALS; MINERALS; NONMETALS; NUCLEI; NUMERICAL DATA; ODD-EVEN NUCLEI; SEMIMETALS; STABLE ISOTOPES; TRANSITION ELEMENTS