Resonance Raman study of annealing in cadmium-implanted cuprous oxide

A resonance Raman scattering study is presented of the annealing behavior of Cu2O implanted with 180-keV Cd++ ions to a dose of 1 x 1014 ions/cm2. As annealing progressed, large changes were observed in the Raman spectra which were obtained with the 488- and 476.5-nm lines of an argon laser to provide excitation nearly resonant with the 1S ''blue'' exciton at 480 nm. A detailed comparison is made of the spectra obtained during annealing with spectra previously reported on unannealed samples implanted with doses ranging from 1.5 x 1011 to 1.5 x 1015 ions/cm2. The analysis indicates a strong annealing stage at -2500C, after which apparently less than 1% of the implantation-produced damage remains