Published July 2016 | Version v1
Journal article

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

  • 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  • 2. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275 (China)

Description

Large-area boron nanowire (BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition (CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5–10 μm. Then, graphene-capped boron nanowires (GC-BNWs) were obtained by microwave plasma chemical vapor deposition (MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/25/7/078101

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
25
Journal Issue
7
Journal Page Range
[4 p.]
ISSN
1674-1056