Published March 2021 | Version v1
Journal article

Time-resolved mid-infrared photoluminescence from highly strained InAs/InGaAs quantum wells grown on InP substrates

  • 1. Nippon Telegraph and Telephone Corp., Nanophotonics center, Atsugi, Kanagawa (Japan)
  • 2. Nippon Telegraph and Telephone Corp., Device Technology Laboratories, Atsugi, Kanagawa (Japan)

Description

We measured time-resolved mid-infrared photoluminescence (PL) from highly strained InAs/InGaAs quantum wells (QWs) grown on InP substrates with a wavelength up-conversion technique. The InAs QWs at 4 K exhibit a narrow PL peaked at a wavelength of 2.125 μm and a PL lifetime as long as 1.1 ns, which supports high homogeneity of the QW thickness and few defects. As the pump fluence increases, a fast PL decay appears within the first 200 ps due to Auger recombination. The temperature dependence of the PL intensity and PL decay reveals interfacial nonradiative trap states in the QWs. (author)

Availability note (English)

Available from DOI: https://doi.org/10.35848/1882-0786/abe1e0

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Express (Online)
Journal Volume
14
Journal Issue
3
Journal Page Range
p. 032008.1-032008.5
ISSN
1882-0786

Optional Information

Notes
40 refs., 3 figs.