First-principles study of graphene adsorbed on WS2 monolayer
Creators
- 1. School of Physics and Technology, University of Jinan, Jinan, Shandong 250022 (China)
Description
We perform first-principles calculations to study the energetics and electronic properties of graphene adsorbed on WS2 surface (G/WS2). We find that the graphene can be bound to WS2 monolayer with an interlayer spacing of about 3.9 ´Å with a binding energy of −21–32 meV per carbon atom dependent on graphene adsorption arrangement, suggesting a weak interaction between graphene and WS2. The nearly linear band dispersion character of graphene can be preserved in G/WS2 system, with a sizable band gap, depending on graphene stacking patterns on WS2 and the distance between graphene and WS2 monolayer. More interestingly, when the interlayer spacing is larger than 3.0 ´Å, the energy-gap opening is mainly determined by the distortion of the isolated graphene peeled from WS2 surface, independent on the WS2 substrate. Further tight-binding model analysis demonstrates that the origin of semiconducting properties can be well understood by the variation of on-site energy of graphene induced by WS2 substrate
Additional details
Identifiers
- DOI
- 10.1063/1.4829483;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 114
- Journal Issue
- 18
- Journal Page Range
- p. 183709-183709.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45078986
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; BINDING ENERGY; ENERGY GAP; GRAPHENE; SUBSTRATES; TUNGSTEN SULFIDES; WEAK INTERACTIONS
- Descriptors DEC
- BASIC INTERACTIONS; CARBON; CHALCOGENIDES; ELEMENTS; ENERGY; INTERACTIONS; NONMETALS; REFRACTORY METAL COMPOUNDS; SORPTION; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC