Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD
Creators
- 1. Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
- 2. Collaborative Innovation Center of Advanced Micro-structures, Nanjing University, Nanjing 210093 (China)
- 3. College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000 (China)
Description
Amorphous Ge-rich Si1−xGex films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties
Additional details
Identifiers
- DOI
- 10.1063/1.4935872;
Publishing Information
- Journal Title
- AIP Advances
- Journal Volume
- 5
- Journal Issue
- 11
- Journal Page Range
- p. 117127-117127.7
- ISSN
- 2158-3226
- CODEN
- AAIDBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47062317
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ATOMS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; FILMS; GERMANIUM; GERMANIUM SILICIDES; MICROSTRUCTURE; PLASMA; SEGREGATION; SILICON; SOLID CLUSTERS; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; ELEMENTS; GERMANIUM COMPOUNDS; HEAT TREATMENTS; METALS; PHASE TRANSFORMATIONS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING
Optional Information
- Notes
- (c) 2015 Author(s)