Chelant-induced reclamation of indium from the spent liquid crystal display panels with the aid of microwave irradiation
Creators
- 1. Institute of Science and Engineering, Kanazawa University, Kakuma, Kanazawa 920-1192 (Japan)
- 2. Department of Applied and Environmental Chemistry, University of Chittagong, Chittagong 4331 (Bangladesh)
- 3. Graduate School of Natural Science and Technology, Kanazawa University, Kakuma, Kanazawa 920-1192 (Japan)
- 4. Graduate School of Engineering, Osaka City University, Sugimoto 3-3-138, Sumiyoshi-Ku, Osaka 558-8585 (Japan)
Description
Highlights: • A new process for indium recovery from end-of-life LCD panels. • Chelants are used for the dissolution of indium from the waste LCD panels. • Indium extraction with chelant is enhanced with the aid of microwave irradiation. • Extraction rate is quantitative in the hyperbaric high-temperature environment. -- Abstract: Indium is a rare metal that is mostly consumed as indium tin oxide (ITO) in the fabrication process of liquid crystal display (LCD) panels. The spent LCD panels, termed as LCD-waste hereafter, is an increasing contributor of electronic waste burden worldwide and can be an impending secondary source of indium. The present work reports a new technique for the reclamation of indium from the unground LCD-waste using aminopolycarboxylate chelants (APCs) as the solvent in a hyperbaric environment and at a high-temperature. Microwave irradiation was used to create the desired system conditions, and a substantial abstraction of indium (≥80%) from the LCD-waste with the APCs (EDTA or NTA) was attained in the acidic pH region (up to pH 5) at the temperature of ≥120 °C and the pressure of ∼50 bar. The unique point of the reported process is the almost quantitative recovery of indium from the LCD-waste that ensured via the combination of the reaction facilitatory effect of microwave exposure and the metal extraction capability of APCs. A method for the selective isolation of indium from the extractant solution and recycle of the chelant in solution is also described
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jhazmat.2013.03.028Additional details
Identifiers
- DOI
- 10.1016/j.jhazmat.2013.03.028;
- PII
- S0304-3894(13)00215-X;
Publishing Information
- Journal Title
- Journal of Hazardous Materials
- Journal Volume
- 254-255
- Journal Page Range
- p. 10-17
- ISSN
- 0304-3894
- CODEN
- JHMAD9
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45051088
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DISSOLUTION; EXTRACTION; FABRICATION; INDIUM; IRRADIATION; LIQUID CRYSTALS; SOLVENTS; TIN OXIDES; WASTES
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; ELEMENTS; FLUIDS; LIQUIDS; METALS; OXIDES; OXYGEN COMPOUNDS; SEPARATION PROCESSES; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.