Published August 2005
| Version v1
Journal article
Enhanced thermal and morphological stability of Ni(Si1-xGex) growth on BF2+-preamorphized Si0.8Ge0.2 substrate
Creators
- 1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)
Description
The stability of nickel germanosilicide formed on Ni thin films on Si0.8Ge0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si1-xGex) is retarded by 100oC in the BF2+-implanted samples. The growth of laterally uniform Ni(Si1-xGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1-xGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2005.04.096;
- PII
- S0168-583X(05)00666-X;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 237
- Journal Issue
- 1-2
- Journal Page Range
- p. 174-178
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 15. international conference on ion implantation technology
- Dates
- 25-27 Oct 2004
- Place
- Taipei, Taiwan (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37022880
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AGGLOMERATION; BUBBLES; EPITAXY; FLUORINE; GERMANIUM SILICIDES; ION IMPLANTATION; LAYERS; NICKEL; POLYCRYSTALS; STABILITY; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CRYSTALS; ELECTRON MICROSCOPY; ELEMENTS; FILMS; GERMANIUM COMPOUNDS; HALOGENS; METALS; MICROSCOPY; NONMETALS; SILICIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.