Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers
Creators
- 1. EIC Laboratories, Inc., Norwood, MA (United States)
- 2. State University of New York, Stony Brook, NY (United States)
- 3. Fisk University, Nashville, TN (United States)
- 4. Oak Ridge National Laboratory, TN (United States)
Description
High-quality, large (10 cm long and 2.5 cm diameter), nuclear spectrometer grade Cd0.9Zn0.1Te (CZT) single crystals have been grown by a controlled vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). A state-of-the-art computer model, multizone adaptive scheme for transport and phase-change processes (MASTRAP), is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown CZT crystal and optimize the thermal profile. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The grown semi-insulating (SI) CZT crystals have demonstrated promising results for high-resolution room-temperature radiation detectors due to their high dark resistivity (ρ ∼ 2.8 x 1011 Θ cm), good charge-transport properties, electron and hole mobility-life-time product, μτe ∼ (2-5) x 10-3 and μτh ∼ (3-5) x 10-5 respectively, and low cost of production. Spectroscopic ellipsometry and optical transmission measurements were carried out on the grown CZT crystals using two-modulator generalized ellipsometry (2-MGE). The refractive index n and extinction coefficient k were determined by mathematically eliminating the ∼3-nm surface roughness layer. Nuclear detection measurements on the single-element CZT detectors with 241Am and 137Cs clearly detected 59.6 and 662 keV energies with energy resolution (FWHM) of 2.4 keV (4.0%) and 9.2 keV (1.4%), respectively.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Electronic Materials
- Journal Volume
- 35
- Journal Issue
- 6
- Journal Page Range
- p. 1251-1256
- ISSN
- 0361-5235
- CODEN
- JECMA5
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 42031791
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE TRANSPORT; COMPUTERS; CONVECTION; CRYSTAL GROWTH; DETECTION; ELECTRONS; ELLIPSOMETRY; ENERGY RESOLUTION; HEAT TRANSFER; MASS TRANSFER; MONOCRYSTALS; PRECURSOR; RADIATION DETECTORS; REFRACTIVE INDEX; ROUGHNESS; SPECTROMETERS; TRANSPORT
- Descriptors DEC
- CRYSTALS; ELEMENTARY PARTICLES; ENERGY TRANSFER; FERMIONS; HEAT TRANSFER; LEPTONS; MASS TRANSFER; MEASURING INSTRUMENTS; MEASURING METHODS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RESOLUTION; SURFACE PROPERTIES
Optional Information
- Contract/Grant/Project number
- KC0202020; ERKCS72; AC05-00OR22725
- Notes
- doi 10.1007/s11664-006-0250-6
- Funding organization
- SC USDOE - Office of Science (United States)