Influence of an electric field on the profile of the concentration of radiation defects in silicon irradiated with electrons of energies close to the defect-formation threshold

An investigation was made of the characteristics of the effect of an electric field in the space charge region on the rate of formation of the A centers (vacancy-oxygen complexes) in silicon p-n diodes irradiated at room temperature with electrons of energy close to the defect-formation threshold. The profile of the concentration of the A centers was determined by the method of double isothermal relaxation of the capacitance. The difference between the profiles of the concentration of the A centers in the space charge regions in different diodes, irradiated under different conditions but in the presence of a similar electric field, was attributed to the different lifetimes and drift lengths of vacancies