Published 1988 | Version v1
Book Metadata-only

Chemical engineering aspects of chemical vapor deposition reactors

Creators

  • 1. Politecnico di Milano, Milan (Italy). Dipt. di Chimica Fisica Applicata

Description

The main features of Chemical Vapor Deposition reactors are reviewed, particularly for what concerns their simulation and design. Examples related to epitaxial silicon and gallium arsenide depositions are illustrated. (author). 16 refs, 9 figs, 4 tabs

Part of:
Epitaxial electronic materials

Additional details

Publishing Information

Publisher
World Scientific.
Imprint Place
Singapore (Singapore)
ISBN
9971-50-506-1
Imprint Title
Epitaxial electronic materials
Imprint Pagination
328 p.
Journal Page Range
p. 71-93.

Conference

Title
International school on technology, characterization and properties of epitaxial electronic materials.
Dates
13-24 Jan 1986.
Place
Trieste (Italy).

INIS

Country of Publication
Singapore
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
23052847
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BOUNDARY LAYERS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXY; EQUIPMENT; GALLIUM ARSENIDES; LECTURES; SILICON; SIMULATION; SPECIFICATIONS; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; DOCUMENT TYPES; ELEMENTS; FILMS; GALLIUM COMPOUNDS; LAYERS; PNICTIDES; SEMIMETALS; SURFACE COATING

Optional Information