Published 1993
| Version v1
Book
Novel amorphous silicon -chalcogen alloys for optoelectronic applications
- 1. University of Bahrain (Bahrain). Dept. of Physics
Description
The vibrational and electronic properties of novel non stoichiometric a-St:H with the chalcogen atoms was found to produce a greater degree of disorder and an increase that S and Se atoms are primarily bonded to Si within the solid matrix. The optical energy gap was found to increase in proportion to the amount and binding energy of incorporated chalcogen atoms. (author)
Additional details
Publishing Information
- Publisher
- Dr. A.Q. Khan Research Laboratories Rawalpindi Pakistan.
- Imprint Place
- Islamabad (Pakistan)
- ISBN
- 969-8122-03-6
- Imprint Title
- Advanced materials-93
- Imprint Pagination
- 792 p.
- Journal Page Range
- p. 146-150.
Conference
- Title
- 3. International Symposium on Advanced Materials.
- Dates
- 20-24 Sep 1993.
- Place
- Islamabad (Pakistan).
INIS
- Country of Publication
- Pakistan
- Country of Input or Organization
- Pakistan
- INIS RN
- 26044422
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; INFRARED SPECTRA; LATTICE VIBRATIONS; OPTICAL PROPERTIES; RAMAN SPECTRA; SILICON
- Descriptors DEC
- ELEMENTS; EQUIPMENT; PHYSICAL PROPERTIES; SEMIMETALS; SPECTRA