Published June 4, 2007
| Version v1
Journal article
Epitaxial relationship between wurtzite GaN and β-Ga2O3
Creators
- 1. Koha Co., Ltd., 2-6-8 Kouyama, Nerima-ku, Tokyo 176-0022 (Japan)
- 2. National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 (Japan)
Description
The epitaxial relationship between wurtzite GaN and monoclinic β-Ga2O3 is studied by transmission electron microscopy. GaN is grown on β-Ga2O3 by molecular beam epitaxy without any low-temperature buffer layer, obtaining c plane GaN on a plane β-Ga2O3. The effect of the surface nitridation, which is necessary for the epitaxial growth, is analyzed at the atomic level. The lattice mismatch has a minimum of 2.6% for the in-plane epitaxial relationship <0 1 1>Ga2O3 parallel <1 0 1 0>GaN
Additional details
Identifiers
- DOI
- 10.1063/1.2745645;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 90
- Journal Issue
- 23
- Journal Page Range
- p. 234102-234102.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39001277
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL GROWTH; GALLIUM NITRIDES; GALLIUM OXIDES; LAYERS; MOLECULAR BEAM EPITAXY; MONOCLINIC LATTICES; NITRIDATION; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES
Optional Information
- Notes
- (c) 2007 American Institute of Physics