Published April 11, 2005
| Version v1
Journal article
Enhanced boron diffusion in excimer laser preannealed Si
Creators
- 1. IFN-CNR, Via Cineto Romano 42, 00156 Rome (Italy)
- 2. CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania (Italy)
- 3. Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box Electrum 229, SE-164 40 Kista (Sweden)
- 4. Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
Description
We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of 1 keV and a dose of 1x1016 cm-2. Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3-5 over the 'standard' diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement
Additional details
Identifiers
- DOI
- 10.1063/1.1899765;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 86
- Journal Issue
- 15
- Journal Page Range
- p. 151902-151902.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37017419
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BORON; DIFFUSION; EXCIMER LASERS; IMPURITIES; ION IMPLANTATION; KEV RANGE 01-10; SEMICONDUCTOR MATERIALS; SILICON; SPATIAL DISTRIBUTION; SURFACES
- Descriptors DEC
- DISTRIBUTION; ELEMENTS; ENERGY RANGE; GAS LASERS; HEAT TREATMENTS; KEV RANGE; LASERS; MATERIALS; SEMIMETALS
Optional Information
- Notes
- (c) 2005 American Institute of Physics