Published July 2, 2012 | Version v1
Journal article

Low-loss EELS of 2D boron nitride

  • 1. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)
  • 2. Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

Description

Electron energy loss spectroscopy provides a probe of the dielectric function of a material which can be affected by the size and morphology of a sample. In this paper, the effect on the loss function when hexagonal boron nitride is reduced to a single layer is investigated. The previously predicted red-shift of the spectrum is seen in experiment and reproduced by modelling using density functional theory. The dielectric function shows that, for a single layer, the lack of screening causes the real part of the dielectric function to tend to 1 so that the loss function resembles the imaginary part of the dielectric function.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/371/1/012060

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
371
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
Electron microscopy and analysis group conference 2011
Acronym
EMAG 2011
Dates
6-9 Sep 2011
Place
Birmingham (United Kingdom)