Published May 26, 2004
| Version v1
Journal article
Investigations of transport phenomena in HgMnTe and HgCdMnTe monocrystals
Description
This paper presents theoretical and experimental investigations of narrow-gap HgMnTe and HgCdMnTe semiconductors. It has been shown that the comparison of temperature dependencies of conductivity and Hall coefficient in the mixed conductivity region makes it possible to determine the content of cadmium and manganese, as well as the concentration of doping acceptor impurity
Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2003.07.029;
- PII
- S0925838803010892;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 371
- Journal Issue
- 1-2
- Journal Page Range
- p. 93-96
- ISSN
- 0925-8388
- CODEN
- JALCEU
Conference
- Title
- Solid solutions of the II-VI compounds-growth, characterization and applications
- Acronym
- E-MRS 2002 Fall Meeting, Symposium G
- Dates
- 14-18 Oct 2002
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37049259
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CHARGED-PARTICLE TRANSPORT; IMPURITIES; MANGANESE TELLURIDES; MERCURY TELLURIDES; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; MANGANESE COMPOUNDS; MATERIALS; MERCURY COMPOUNDS; RADIATION TRANSPORT; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.