Published August 1994 | Version v1
Journal article Metadata-only

Analysis of capacitance measurements on silicon microstrip detectors

Creators

  • 1. Univ. of California, Santa Cruz, CA (United States)

Description

The authors present an analysis of the total strip capacitance of double-sided, AC-coupled silicon microstrip detectors. They evaluate the radiation hardness and the noise contribution of different strip geometries. They comment on a serious failure mode

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
41
Journal Issue
4Pt1
Journal Page Range
p. 785-790.
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
nuclear science symposium and medical imaging conference.
Acronym
NSS-MIC '93
Dates
30 Oct - 6 Nov 1993.
Place
San Francisco, CA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
26026292
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
CAPACITANCE; COMPUTERIZED SIMULATION; DATA ANALYSIS; EXPERIMENTAL DATA; FAILURES; HIGH ENERGY PHYSICS; RADIATION HARDENING; S CODES; SI SEMICONDUCTOR DETECTORS
Descriptors DEC
COMPUTER CODES; DATA; ELECTRICAL PROPERTIES; HARDENING; INFORMATION; MEASURING INSTRUMENTS; NUMERICAL DATA; PHYSICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; PHYSICS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SIMULATION

Optional Information

Secondary number(s)
CONF-931051--.