Published February 24, 1975
| Version v1
Journal article
Range parameters of heavy ions at 10 and 35 keV in silicon
Creators
- 1. Max-Planck-Institut fuer Kernphysik, Heidelberg (F.R. Germany)
Description
no abstract available
Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Letters A
- Journal Volume
- 51
- Journal Issue
- 3
- Series
- Phys. Lett., A.
- Journal Page Range
- 165-166
- ISSN
- 0375-9601
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 6186774
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARSENIC IONS; BACKSCATTERING; GERMANIUM IONS; HEAVY IONS; ION BEAMS; ION IMPLANTATION; KEV RANGE 10-100; RANGE; SILICON
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; SCATTERING; SEMIMETALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent