Published July 1, 2005
| Version v1
Journal article
The role of higher silanes in silane-discharge particle growth
- 1. JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440 (United States)
Description
A small concentration of stable higher silanes (HS) build up in an (initially) pure-silane discharge. Here it is shown that these HS cause a major increase in particle growth rates but have no effect on film growth rates. This explains the observed increase of growth rate during the first seconds of a transient discharge, as the HS build up toward a steady-state concentration of several percent. A rapid increase in particle versus film growth rate also occurs at larger values of discharge power and pressure, and the HS also appear to cause this. Possible reasons for this extreme sensitivity of particles, but not of films, to the HS are evaluated
Additional details
Identifiers
- DOI
- 10.1063/1.1947895;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 98
- Journal Issue
- 1
- Journal Page Range
- p. 013304-013304.7
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37028001
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- CRYSTAL GROWTH; ELECTRIC DISCHARGES; FILMS; PARTICLE SIZE; PARTICLES; PLASMA; SENSITIVITY; SILANES; STEADY-STATE CONDITIONS
- Descriptors DEC
- HYDRIDES; HYDROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; SILICON COMPOUNDS; SIZE
Optional Information
- Notes
- (c) 2005 American Institute of Physics