Published July 1, 2005 | Version v1
Journal article

The role of higher silanes in silane-discharge particle growth

  • 1. JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440 (United States)

Description

A small concentration of stable higher silanes (HS) build up in an (initially) pure-silane discharge. Here it is shown that these HS cause a major increase in particle growth rates but have no effect on film growth rates. This explains the observed increase of growth rate during the first seconds of a transient discharge, as the HS build up toward a steady-state concentration of several percent. A rapid increase in particle versus film growth rate also occurs at larger values of discharge power and pressure, and the HS also appear to cause this. Possible reasons for this extreme sensitivity of particles, but not of films, to the HS are evaluated

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
98
Journal Issue
1
Journal Page Range
p. 013304-013304.7
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37028001
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
CRYSTAL GROWTH; ELECTRIC DISCHARGES; FILMS; PARTICLE SIZE; PARTICLES; PLASMA; SENSITIVITY; SILANES; STEADY-STATE CONDITIONS
Descriptors DEC
HYDRIDES; HYDROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; SILICON COMPOUNDS; SIZE

Optional Information

Notes
(c) 2005 American Institute of Physics