Physical properties of LaCo_0.9Nb_0.1O₃ thin films grown by pulsed laser deposition

Here, we examine the physical properties of LaCo_0.9Nb_0.1O₃ (LCNO) thin films grown on the Si (100) substrate by pulsed laser deposition. We used the KrF excimer laser (λ=248 nm) and the films are grown at the substrate temperatures of 750°C and 700°C with the energy density of ∼1.1 J/cm². The oxygen partial pressure of 2.5×10-1 mbar was maintained during the deposition and slow cooling. The room temperature XRD data show the peaks from the silicon substrate and the (00l) planes of grown LCNO films, which indicate that these films are well ordered. The Raman measurements of all the samples show the peak at ∼640 cm^-1, which is attributed to the A_2g breathing in the LCNO system. We study the effect of different parameters on the structural and magnetic properties of LCNO films grown on different substrates. (author)