Published November 2005 | Version v1
Journal article

Optical characteristics of BaGa2S4:Ho3+ and BaGa2Se4:Ho3+ single crystals

  • 1. Chosun University, Kwangju (Korea, Republic of)
  • 2. Dongshin University, Naju (Korea, Republic of)
  • 3. Chonnam National University, Kwangju (Korea, Republic of)

Description

BaGa2S4, BaGa2S4:Ho3+, BaGa2Se4, and BaGa2Se4:Ho3+ single crystals were grown by using the chemical transport reaction method. The optical energy gaps of the single crystals were investigated in the temperature region from 11 K to 300 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Two broad emission bands were observed in the photoluminescence spectra of the single crystals. These bands were attributed to donor-acceptor pair recombinations. Sharp emission peaks were observed in the BaGa2S4:Ho3+ and the BaGa2Se4:Ho3+ single crystals and were assigned to radiation recombination between split Stark levels of Ho3+.

Additional details

Publishing Information

Journal Title
Journal of the Korean Physical Society
Journal Volume
47
Journal Issue
5
Series
14 refs, 6 figs, 1 tab
Journal Page Range
p. 866-870
ISSN
0374-4884