Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor
Creators
- 1. Russian Academy of Sciences, Institute of Problems of Microelectronics Technology (Russian Federation)
- 2. Institute des NanoSciences (France)
Description
Y2O2S luminophors doped with Er3+ and Yb3+ ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m2 of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y2O2S compound doped with 2 at % Er3+ ions and 6 at % Yb3+ ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is η = 1.2 lm/W at an applied voltage of 1.5 V
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 42
- Journal Issue
- 3
- Journal Page Range
- p. 358-362
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39097971
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CONVERSION; DOPED MATERIALS; ERBIUM IONS; GALLIUM ARSENIDES; LIGHT EMITTING DIODES; LUMINESCENCE; QUANTUM EFFICIENCY; STANDARDS; SYNTHESIS; YTTERBIUM IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; EFFICIENCY; EMISSION; GALLIUM COMPOUNDS; IONS; MATERIALS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2008 Pleiades Publishing, Ltd.