Published April 2003 | Version v1
Journal article

MOSFET dosimetry for microbeam radiation therapy at the European Synchrotron Radiation Facility

  • 1. Institute of Pathology, University of Bern, Murtenstrasse 31, 3010 Bern (Switzerland)
  • 2. European Synchrotron Radiation Facility, B.P. 220, 38043 Grenoble (France)
  • 3. Paul Scherrer Institut (PSI), CH-5232 Villigen (Switzerland)
  • 4. Center for Medical Radiation Physics, University of Wollongong, Wollongong, NSW, 2522 (Australia)

Description

Preclinical experiments are carried out with ∼20-30 μm wide, ∼10 mm high parallel microbeams of hard, broad-'white'-spectrum x rays (∼50-600 keV) to investigate microbeam radiation therapy (MRT) of brain tumors in infants for whom other kinds of radiotherapy are inadequate and/or unsafe. Novel physical microdosimetry (implemented with MOSFET chips in the 'edge-on' mode) and Monte Carlo computer-simulated dosimetry are described here for selected points in the peak and valley regions of a microbeam-irradiated tissue-equivalent phantom. Such microbeam irradiation causes minimal damage to normal tissues, possible because of rapid repair of their microscopic lesions. Radiation damage from an array of parallel microbeams tends to correlate with the range of peak-valley dose ratios (PVDR). This paper summarizes comparisons of our dosimetric MOSFET measurements with Monte Carlo calculations. Peak doses at depths <22 mm are 18% less than Monte Carlo values, whereas those depths >22 mm and valley doses at all depths investigated (2 mm-62 mm) are within 2-13 % of the Monte Carlo values. These results lend credence to the use of MOSFET detector systems in edge-on mode for microplanar irradiation dosimetry

Additional details

Identifiers

Publishing Information

Journal Title
Medical Physics
Journal Volume
30
Journal Issue
4
Journal Page Range
p. 583-589
ISSN
0094-2405
CODEN
MPHYA6

Optional Information

Notes
(c) 2003 American Association of Physicists in Medicine.