Published 2010 | Version v1
Miscellaneous

Influence of electronic processes on inelastic-elastic properties of SiO2 and Si

  • 1. Taras Shevchenko National University, Kyiv (Ukraine)

Description

no abstract available

Part of:
Materials of 8 International Conference on Electronic Processes in Organic and Inorganic Materials. Abstracts

Additional details

Publishing Information

Publisher
Naukovij Svyit
Imprint Place
Kyiv (Ukraine)
Imprint Title
Materials of 8 International Conference on Electronic Processes in Organic Materials. Abstracts
Imprint Pagination
192 p.
Journal Page Range
p. 95-96
Report number
INIS-UA--170

Conference

Title
8. International Conference on Electronic Processes in Organic and Inorganic Materials
Dates
17-22 May 2010
Place
Ivano-Frankivsk (Ukraine)

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
43051020
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
DEFORMATION; ELASTICITY; INTERNAL FRICTION; LAYERS; SILICON; SILICON OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; ULTRASONIC WAVES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; FRICTION; MECHANICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SOUND WAVES; TEMPERATURE RANGE

Optional Information