Phase Transformation of TiO2 from Anatase to Rutile by Thermal Annealing and Swift Heavy Ion Irradiation
Creators
- 1. Department of Physics, Utkal University, Bhubaneswar 751 004 (India)
- 2. Institute of Minerals and Materials Technology, Bhubaneswar 751 013 (India)
- 3. Institute of Physics, Bhubaneswar 751 005 (India)
- 4. KIIT University, Bhubaneswar 751024 (India)
- 5. Inter-University Acceleration Centre, New Delhi 110067 (India)
Description
In the present study, we probe into the phase transition from anatase to rutile in nanocrystalline thin films under thermal annealing and swift heavy ion (SHI) irradiation. TiO2 thin films were prepared through chemical route using sol-gel and spin coating techniques on silicon (100) substrates. The structural studies of the annealed films were characterized by GAXRD and Raman spectroscopy. Though thermal annealing is known to cause transformation from anatase to rutile phase of TiO2 in a temperature interval of 700 to 900 C, in nanoparticle thin films, we found ∼35 vol% of anatase still remains even after annealing at 1000 C. SHI irradiation by 200 MeV Ag ions on the other hand resulted in complete conversion to rutile phase at fluence of 3x1012 ions.cm-2. SHI induced thermal spike seems to be responsible for conversion of anatase to rutile phase.
Additional details
Identifiers
- DOI
- 10.1063/1.3027167;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1063
- Journal Issue
- 1
- Journal Page Range
- p. 250-255
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- International workshop on mesoscopic, nanoscopic and macroscopic materials
- Acronym
- IWMNMM-2008
- Dates
- 2-4 Jan 2008
- Place
- Bhubaneswar (India)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41002930
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTALS; IRRADIATION; MEV RANGE 100-1000; NANOSTRUCTURES; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; RAMAN SPECTROSCOPY; RUTILE; SILICON; SILVER IONS; SOL-GEL PROCESS; SPIN; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THERMAL SPIKES; THIN FILMS; TITANIUM OXIDES
- Descriptors DEC
- ANGULAR MOMENTUM; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; FILMS; HEAT TREATMENTS; IONS; LASER SPECTROSCOPY; MATERIALS; MEV RANGE; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; RADIATION EFFECTS; RADIOACTIVE MATERIALS; RADIOACTIVE MINERALS; SEMIMETALS; SPECTROSCOPY; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics