Control of power characteristics of ion flow in plasma-etching reactor based on beam-plasma discharge

It is shown that on the basis of the earlier revealed effect of generating the ion flow in the beam-plasma discharge from the discharge axis, a plasma processing reactor can be created for low-energy etching of semiconductor structures. The possibility of easily controlling the density and energy of ion flow by means of varying the potential of the discharge collector is demonstrated. The charge compensation of the ion flow incident on the nonconducting surface is implemented using the modulation of the potential of the substrate holder as well as the plasma-potential modulation.