Temperature dependence of drift mobility in the presence of trap-recombination centers

The authors studied theoretically and experimentally the effect of recombination - trap centres on the temperature dependence of the drift mobility of μg charge carriers in semiconductors. The temperature dependence of μg(T) becomes more steep than the temperature dependence of the μg(T) microscopic mobility in the field of temperatures where Ed approximately equal to Esub(t)+-2kT (Ed - demarkation level, Esub(t) - level of the placement of centres). μg(T) was experimentally removed in CdS by the temperature dependences of the acoustocurrent. Experimental data correlate with theoretical measurements