Published 1976 | Version v1
Report Open

Study of radiation effects generated by ion analyzers

Creators

  • 1. CEA Centre d'Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France). Dept. de Technologie

Description

The first results of a theoretical and experimental study of irradiation effects involved in the analysis of interface profiles are presented. These results are discussed by considering two mechanisms for the atom migration under irradiation: recoil implantation, and accelerated diffusion due to defect sursaturation

Availability note (English)

MF available from INIS under the Report Number.

Abstract (French)

On presente les premiers resultats d'une etude theorique et experimentale des effets d'irradiation intervenant pendant l'analyse de profils d'interface. On a discute ces resultats en considerant deux mecanismes de migration sous irradiation: l'implantation de recul et la diffusion acceleree dans les conditions de sursaturation des defauts

Files

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Additional details

Additional titles

Original title (French)
Etude d'effets d'irradiation a l'analyseur ionique

Publishing Information

Imprint Pagination
15 p.
Report number
CEA-CONF--3677

Conference

Title
19. Colloquium on metallurgy. Diffusion in condensed mediums. Theory and applications.
Dates
22 Jun 1976.
Place
Saclay, France.

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
8302877
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; DIFFUSION; INTERFACES; ION EMISSION; ION IMPLANTATION; ION MICROPROBE ANALYSIS; PHYSICAL RADIATION EFFECTS
Descriptors DEC
CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; NONDESTRUCTIVE ANALYSIS; RADIATION EFFECTS